IXSA10N60B2D1
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-263
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.59999g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 600V
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*10N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 30 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 60 ns
Test Condition 480V, 10A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Turn Off Time-Nom (toff) 530 ns
IGBT Type PT
Gate Charge 17nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 30ns/180ns
Switching Energy 430μJ (off)
Dimensions
Height 4.5mm
Length 9.9mm
Width 9.2mm
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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