IXRP15N120
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 25A 300W TO220
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.1mJ (on), 130μJ (off)
Gate Charge 36nC
IGBT Type NPT
Turn Off Time-Nom (toff) 253 ns
Vce(on) (Max) @ Vge, Ic 2.95V @ 15V, 10A
Test Condition 600V, 10A, 47 Ω, 15V
Turn On Time 33.5 ns
Collector Emitter Saturation Voltage 2.5V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-220AB
Reverse Recovery Time 300 ns
Max Collector Current 25A
Collector Emitter Voltage (VCEO) 2.95V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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