IXRH40N120
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 55A 300W TO247AD
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Technical Details
Technical
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 55A
Reverse Recovery Time 2.1μs
Part Status Obsolete
Pbfree Code yes
Published 2005
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Switching Energy 3mJ (on), 700μJ (off)
Gate Charge 90nC
IGBT Type NPT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Test Condition 600V, 35A, 15 Ω, 15V
Turn On Time 220 ns
Collector Emitter Saturation Voltage 2.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Physical
Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Compliance
RoHS Status RoHS Compliant
Alternative Model
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