IXGX82N120B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors GenX3 1200V IGBTs
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Fall Time-Max (tf) 180ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C 30ns/210ns
Current - Collector Pulsed (Icm) 500A
Gate Charge 350nC
IGBT Type PT
Turn Off Time-Nom (toff) 760 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 82A
Test Condition 600V, 80A, 2 Ω, 15V
Turn On Time 112 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 230A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 1250W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 1.25kW
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Packaging Tube
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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