Fall Time-Max (tf) 150 ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C 31ns/152ns
Current - Collector Pulsed (Icm) 450A
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 60A
Test Condition 480V, 50A, 3 Ω, 15V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 140 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number IXG*72N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 540W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ