IXGX64N60B3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.5mJ (on), 1mJ (off)
Td (on/off) @ 25°C 25ns/138ns
Current - Collector Pulsed (Icm) 400A
Gate Charge 168nC
IGBT Type PT
Turn Off Time-Nom (toff) 326 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Test Condition 480V, 50A, 3 Ω, 15V
Turn On Time 64 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 35ns
Max Collector Current 64A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 460W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2012
Packaging Tube
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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