IXGX50N60AU1
RoHS
/
Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 300W TO247
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Technical Details
Technical
Test Condition 480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Turn Off Time-Nom (toff) 280 ns
Gate Charge 200nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 4.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 400ns
Turn On Time 50 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 35 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Base Part Number IXG*50N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 75A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 300W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFAST?
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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