IXGX35N120CD1
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 70A 350W PLUS247
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Technical Details
Technical
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 350W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 70A
Reverse Recovery Time 60 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 86 ns
Test Condition 960V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 35A
Turn Off Time-Nom (toff) 480 ns
Gate Charge 170nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 50ns/150ns
Switching Energy 3mJ (off)
Base Part Number IXG*35N120
Terminal Position SINGLE
Max Power Dissipation 350W
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HiPerFAST?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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