IXGX32N170AH1
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1700V 32A 350W PLUS247
PDF
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Buying Options
Total Price: USD $3.53
Unit Price: USD $3.53494
≥1 USD $3.53494
≥10 USD $3.33484
≥100 USD $3.14608
≥500 USD $2.968
≥1000 USD $2.8
≥3000 USD $2.64151
Inventory: 1326
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 350W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*32N170
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 32A
Reverse Recovery Time 150 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 4V
Turn On Time 74 ns
Test Condition 850V, 32A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 21A
Turn Off Time-Nom (toff) 362 ns
IGBT Type NPT
Gate Charge 157nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 27ns/270ns
Switching Energy 4.1mJ (on), 1.25mJ (off)
Compliance
RoHS Status RoHS Compliant
Alternative Model
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