Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.7mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C 44ns/250ns
Current - Collector Pulsed (Icm) 1200A
Turn Off Time-Nom (toff) 780 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 100A
Test Condition 480V, 100A, 1 Ω, 15V
Collector Emitter Saturation Voltage 600V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 500A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 1.7kW
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)