IXGX120N60B
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 200A 660W TO247
PDF
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Buying Options
Total Price: USD $2.41
Unit Price: USD $2.41395
≥1 USD $2.41395
≥10 USD $1.98075
≥100 USD $1.919
≥500 USD $1.85725
≥1000 USD $1.7955
Inventory: 1158
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Series HiPerFAST?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 660W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 200A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 660W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application POWER CONTROL
Rise Time 45ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 200 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 120 ns
Test Condition 480V, 100A, 2.4 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 120A
Turn Off Time-Nom (toff) 540 ns
IGBT Type PT
Gate Charge 350nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 60ns/200ns
Switching Energy 2.4mJ (on), 5.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 280ns
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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