IXGX120N60A3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 200A 780W PLUS247
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Buying Options
Total Price: USD $17.76
Unit Price: USD $17.7584
≥1 USD $17.7584
≥10 USD $15.64816
≥100 USD $13.53352
≥500 USD $12.264736
Inventory: 322
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 780W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 780W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.2V
Turn On Time 123 ns
Test Condition 480V, 100A, 1.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 100A
Turn Off Time-Nom (toff) 830 ns
IGBT Type PT
Gate Charge 450nC
Current - Collector Pulsed (Icm) 600A
Td (on/off) @ 25°C 39ns/295ns
Switching Energy 2.7mJ (on), 6.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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