IXGV25N250S
RoHS
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Package PLUS-220SMD
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 2500V 60A 250W PLUS220SMD
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PLUS-220SMD
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Max Power Dissipation 250W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*25N250
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 5.2V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 2.5kV
Voltage - Collector Emitter Breakdown (Max) 2500V
Turn On Time 301 ns
Vce(on) (Max) @ Vge, Ic 5.2V @ 15V, 75A
Turn Off Time-Nom (toff) 409 ns
IGBT Type NPT
Gate Charge 75nC
Current - Collector Pulsed (Icm) 200A
Compliance
RoHS Status RoHS Compliant
Alternative Model
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