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IXGT60N60C3D1

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 75A 380W TO268
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Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series GenX3?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 380W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*60N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 380W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 75A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 64 ns
Test Condition 480V, 40A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 226 ns
IGBT Type PT
Gate Charge 115nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 21ns/70ns
Switching Energy 800μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 95 ns

Compliance

RoHS Status ROHS3 Compliant

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