IXGT4N250C
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 2500V 13A 150W TO268
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 360μJ (off)
Td (on/off) @ 25°C -/350ns
Current - Collector Pulsed (Icm) 46A
Gate Charge 57nC
IGBT Type NPT
Turn Off Time-Nom (toff) 471 ns
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 4A
Test Condition 1250V, 4A, 20 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 2500V
Collector Emitter Breakdown Voltage 2.5kV
Max Collector Current 13A
Collector Emitter Voltage (VCEO) 6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 150W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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