IXGT40N60B2D1
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 75A 3-Pin(2+Tab) TO-268
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Switching Energy 400μJ (off)
Td (on/off) @ 25°C 18ns/130ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 100nC
IGBT Type PT
Turn Off Time-Nom (toff) 390 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Test Condition 400V, 30A, 3.3 Ω, 15V
Turn On Time 38 ns
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 25 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number IXG*40N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 300W
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series HiPerFAST?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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