IXGT40N120B2D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(2+Tab) TO-268
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Buying Options
Total Price: USD $25.51
Unit Price: USD $25.5056
≥1 USD $25.5056
≥10 USD $20.92755
≥100 USD $20.27395
≥500 USD $19.62035
≥1000 USD $18.9658
Inventory: 445
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Weight 4.500005g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 380W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*40N120
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 380W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 75A
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 79 ns
Test Condition 960V, 40A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 40A
Turn Off Time-Nom (toff) 770 ns
IGBT Type PT
Gate Charge 138nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 21ns/290ns
Switching Energy 4.5mJ (on), 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 270ns
Dimensions
Height 5.1mm
Length 16.05mm
Width 14mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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