IXGT32N60BD1
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-268
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Fall Time-Max (tf) 150ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (off)
Td (on/off) @ 25°C 25ns/100ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 110nC
Turn Off Time-Nom (toff) 240 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 32A
Test Condition 480V, 32A, 4.7 Ω, 15V
Turn On Time 50 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 25 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number IXG*32N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series HiPerFAST?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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