Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.47mJ (on), 2.16mJ (off)
Td (on/off) @ 25°C 16ns/127ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 471 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Test Condition 960V, 30A, 5 Ω, 15V
Collector Emitter Saturation Voltage 3.5V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 100 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXG*30N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ