Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 13.5A
Turn Off Time-Nom (toff) 278 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 2A
Voltage - Collector Emitter Breakdown (Max) 2500V
Collector Emitter Breakdown Voltage 2.5kV
Max Collector Current 5.5A
Collector Emitter Voltage (VCEO) 3.1V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 32W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ