IXGT28N60B
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-268
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Fall Time-Max (tf) 400ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2mJ (off)
Td (on/off) @ 25°C 15ns/175ns
Current - Collector Pulsed (Icm) 80A
Gate Charge 68nC
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 28A
Test Condition 480V, 28A, 10 Ω, 15V
Turn On Time 15 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 150W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number IXG*28N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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