IXGT24N170
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1.7KV 50A 3-Pin(2+Tab) TO-268
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*24N170
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 105 ns
Test Condition 1360V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 24A
Turn Off Time-Nom (toff) 560 ns
IGBT Type NPT
Gate Charge 106nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 42ns/200ns
Switching Energy 8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 500ns
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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