IXGT16N170
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1.7KV 32A 3-Pin(2+Tab) TO-268
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Buying Options
Total Price: USD $24.95
Unit Price: USD $24.952977
≥1 USD $24.952977
≥210 USD $9.957034
≥510 USD $9.623557
≥990 USD $9.459445
Inventory: 3776
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Fall Time-Max (tf) 1100 ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 9.3mJ (off)
Td (on/off) @ 25°C 45ns/400ns
Current - Collector Pulsed (Icm) 80A
Gate Charge 78nC
IGBT Type NPT
Turn Off Time-Nom (toff) 1600 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 16A
Test Condition 1360V, 16A, 10 Ω, 15V
Turn On Time 90 ns
Collector Emitter Saturation Voltage 2.7V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
JEDEC-95 Code TO-247AD
Max Collector Current 32A
Collector Emitter Voltage (VCEO) 1.7kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 190W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXG*16N170
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Max Power Dissipation 190W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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