IXGT15N120C
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 30A 150W TO268
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Fall Time-Max (tf) 190ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.05mJ (off)
Td (on/off) @ 25°C 25ns/150ns
Current - Collector Pulsed (Icm) 60A
Gate Charge 69nC
Turn Off Time-Nom (toff) 470 ns
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 15A
Test Condition 960V, 15A, 10 Ω, 15V
Turn On Time 43 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 3.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 150W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number IXG*15N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SWITCHING LOSSES
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Series Lightspeed?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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