Fall Time-Max (tf) 110 ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.03mJ (on), 480μJ (off)
Td (on/off) @ 25°C 27ns/77ns
Current - Collector Pulsed (Icm) 400A
Turn Off Time-Nom (toff) 244 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Test Condition 480V, 50A, 2 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 35ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number IXG*72N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ