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IXGR72N60C3D1

IXYS
RoHS
RoHS RoHS compliant
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 75A 200W ISOPLUS247
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Fall Time-Max (tf) 110 ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.03mJ (on), 480μJ (off)
Td (on/off) @ 25°C 27ns/77ns
Current - Collector Pulsed (Icm) 400A
Gate Charge 175nC
IGBT Type PT
Turn Off Time-Nom (toff) 244 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Test Condition 480V, 50A, 2 Ω, 15V
Turn On Time 62 ns
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 35ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection ISOLATED
Power Dissipation 200W
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXG*72N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 30 Weeks

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