IXGR72N60B3H1
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 200W ISOPLUS247
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Buying Options
Total Price: USD $33.67
Unit Price: USD $33.669321
≥1 USD $33.669321
≥200 USD $13.02922
≥500 USD $12.57233
≥1000 USD $12.345199
Inventory: 1260
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Fall Time-Max (tf) 150 ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C 31ns/152ns
Current - Collector Pulsed (Icm) 450A
Gate Charge 225nC
IGBT Type PT
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 60A
Test Condition 480V, 50A, 3 Ω, 15V
Turn On Time 63 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 140 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 1.8V
Turn-Off Delay Time 152 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Turn On Delay Time 31 ns
Input Type Standard
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXG*72N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2016
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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