Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 50W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 5.5A
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Test Condition 850V, 6A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic 7V @ 15V, 3A
Turn Off Time-Nom (toff) 271 ns
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 46ns/220ns
Switching Energy 590μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V