Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 830μJ (on), 450μJ (off)
Td (on/off) @ 25°C 24ns/70ns
Current - Collector Pulsed (Icm) 260A
Turn Off Time-Nom (toff) 198 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Test Condition 480V, 40A, 3 Ω, 15V
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number IXG*60N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 170W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ