IXGR55N120A3H1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 70A 200W ISOPLUS247
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C 23ns/365ns
Current - Collector Pulsed (Icm) 330A
Gate Charge 185nC
IGBT Type PT
Turn Off Time-Nom (toff) 1253 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 55A
Test Condition 960V, 55A, 3 Ω, 15V
Turn On Time 70 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Reverse Recovery Time 200 ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 2.35V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Terminal Finish TIN SILVER COPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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