Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3mJ (off)
Td (on/off) @ 25°C 50ns/110ns
Current - Collector Pulsed (Icm) 200A
Turn Off Time-Nom (toff) 375 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Test Condition 480V, 50A, 2.7 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 35 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXG*50N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ