IXGR50N60B2D1
RoHS
/
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 68A 200W ISOPLUS247
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Switching Energy 550μJ (off)
Td (on/off) @ 25°C 18ns/190ns
Current - Collector Pulsed (Icm) 300A
Gate Charge 140nC
Turn Off Time-Nom (toff) 430 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Test Condition 480V, 40A, 5 Ω, 15V
Turn On Time 43 ns
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 35 ns
Max Collector Current 68A
Collector Emitter Voltage (VCEO) 600V
Rise Time 65ns
Transistor Application POWER CONTROL
Input Type Standard
Case Connection ISOLATED
Power Dissipation 200W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*50N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFAST?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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