Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 240W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 75A
Reverse Recovery Time 230 ns
Collector Emitter Breakdown Voltage 1.6kV
Voltage - Collector Emitter Breakdown (Max) 1600V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Turn Off Time-Nom (toff) 4840 ns
Operating Temperature -55°C~150°C TJ
Current - Collector Pulsed (Icm) 330A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V