Fall Time-Max (tf) 200 ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 840μJ (on), 660μJ (off)
Td (on/off) @ 25°C 22ns/130ns
Current - Collector Pulsed (Icm) 280A
Turn Off Time-Nom (toff) 347 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Test Condition 480V, 30A, 5 Ω, 15V
Collector Emitter Saturation Voltage 1.77V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 100 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXG*48N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ