IXGR35N120C
RoHS
/
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 70A 200W ISOPLUS247
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3mJ (off)
Td (on/off) @ 25°C 50ns/150ns
Current - Collector Pulsed (Icm) 140A
Gate Charge 170nC
Turn Off Time-Nom (toff) 480 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 35A
Test Condition 960V, 35A, 4.7 Ω, 15V
Turn On Time 86 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 4V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection ISOLATED
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Base Part Number IXG*35N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Series HiPerFAST?
Published 2001
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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