Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*35N120
Qualification Status Not Qualified
Element Configuration Single
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.3V
Test Condition 960V, 35A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A
Turn Off Time-Nom (toff) 660 ns
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 50ns/180ns
Switching Energy 3.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V