Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 140W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*32N60
Qualification Status Not Qualified
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 45A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Test Condition 480V, 32A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 32A
Turn Off Time-Nom (toff) 210 ns
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 25ns/85ns
Switching Energy 320μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V