Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 900μJ (off)
Td (on/off) @ 25°C 36ns/200ns
Current - Collector Pulsed (Icm) 40A
Turn Off Time-Nom (toff) 255 ns
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 8A
Test Condition 850V, 16A, 10 Ω, 15V
Collector Emitter Saturation Voltage 4.2V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Reverse Recovery Time 150 ns
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 1.7kV
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXG*16N170
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 120W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ