IXGQ50N60C4D1
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 90A 300W TO3P
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Inventory: 2021
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 950μJ (on), 840μJ (off)
Td (on/off) @ 25°C 40ns/270ns
Current - Collector Pulsed (Icm) 220A
Gate Charge 113nC
IGBT Type PT
Turn Off Time-Nom (toff) 306 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 36A
Test Condition 400V, 36A, 10 Ω, 15V
Turn On Time 75 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 25 ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 2
Reach Compliance Code unknown
Terminal Position SINGLE
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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