IXGQ50N60B4D1
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors PT Trench IGBTs Power Device
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Reach Compliance Code unknown
Pin Count 2
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 100A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.4V
Turn On Time 76 ns
Test Condition 400V, 36A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 36A
Turn Off Time-Nom (toff) 500 ns
IGBT Type PT
Gate Charge 110nC
Current - Collector Pulsed (Icm) 230A
Td (on/off) @ 25°C 37ns/330ns
Switching Energy 930μJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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