IXGQ20N120B
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 40A 190W TO3P
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.1mJ (off)
Td (on/off) @ 25°C 20ns/270ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 62nC
IGBT Type PT
Turn Off Time-Nom (toff) 630 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Test Condition 960V, 20A, 10 Ω, 15V
Turn On Time 43 ns
Collector Emitter Saturation Voltage 3.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 40 ns
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 3.4V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 190W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 2
Base Part Number IXG*20N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 190W
Subcategory Insulated Gate BIP Transistors
Terminal Finish PURE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 5.500006g
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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