IXGP8N100
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 16A 54W TO220
PDF
/
Inventory: 3120
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.3mJ (off)
Td (on/off) @ 25°C 15ns/600ns
Current - Collector Pulsed (Icm) 32A
Gate Charge 26.5nC
IGBT Type PT
Turn Off Time-Nom (toff) 900 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 8A
Test Condition 800V, 8A, 120 Ω, 15V
Turn On Time 15 ns
Collector Emitter Saturation Voltage 3V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
JEDEC-95 Code TO-220AB
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 1kV
Turn-Off Delay Time 600 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 54W
Turn On Delay Time 15 ns
Input Type Standard
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 54W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SATURATION VOLTAGE
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
Recommended For You
IXGP8N100+price,IXGP8N100+datasheet,IXGP8N100+in stock,buy+IXGP8N100,finder+IXGP8N100,IXGP8N100+tutorials,IXGP8N100+download