IXGP7N60CD1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB
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Technical Details
Technical
Td (on/off) @ 25°C 10ns/65ns
Current - Collector Pulsed (Icm) 30A
Gate Charge 25nC
Turn Off Time-Nom (toff) 205 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Test Condition 480V, 7A, 18 Ω, 15V
Turn On Time 25 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 35 ns
Max Collector Current 14A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 75W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*7N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 75W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series HiPerFAST?, Lightspeed?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Fall Time-Max (tf) 110ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 120μJ (off)
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Compliance
RoHS Status RoHS Compliant
Alternative Model
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