IXGP50N60C4
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 90A 300W TO220
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 950μJ (on), 840μJ (off)
Td (on/off) @ 25°C 40ns/270ns
Current - Collector Pulsed (Icm) 220A
Gate Charge 113nC
IGBT Type PT
Turn Off Time-Nom (toff) 306 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 36A
Test Condition 400V, 36A, 10 Ω, 15V
Turn On Time 75 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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