IXGP4N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 8A 40W TO220AB
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Switching Energy 900μJ (off)
Td (on/off) @ 25°C 20ns/390ns
Current - Collector Pulsed (Icm) 16A
Gate Charge 13.6nC
Turn Off Time-Nom (toff) 1220 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 4A
Test Condition 800V, 4A, 120 Ω, 15V
Turn On Time 45 ns
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
JEDEC-95 Code TO-220AB
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 40W
Input Type Standard
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 40W
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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