Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 410μJ (on), 230μJ (off)
Td (on/off) @ 25°C 19ns/60ns
Current - Collector Pulsed (Icm) 250A
Turn Off Time-Nom (toff) 187 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Test Condition 400V, 30A, 3 Ω, 15V
Collector Emitter Saturation Voltage 2.3V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXG*48N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ