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IXGP30N60C3D4

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 60A 220W TO220AB
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 270μJ (on), 90μJ (off)
Td (on/off) @ 25°C 16ns/42ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 38nC
IGBT Type PT
Turn Off Time-Nom (toff) 160 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Test Condition 300V, 20A, 5 Ω, 15V
Turn On Time 45 ns
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 60 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 220W
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXG*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 220W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 26 Weeks

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