Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 270μJ (on), 90μJ (off)
Td (on/off) @ 25°C 16ns/42ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 160 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Test Condition 300V, 20A, 5 Ω, 15V
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 60 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number IXG*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 220W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ