IXGP30N60C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 220W TO220AB
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Buying Options
Total Price: USD $74.01
Unit Price: USD $74.01165
≥1 USD $74.01165
≥10 USD $71.69935
≥100 USD $69.3861
≥500 USD $67.07285
≥1000 USD $60.135
Inventory: 1163
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 220W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 220W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Turn On Time 45 ns
Test Condition 300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 160 ns
IGBT Type PT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/42ns
Switching Energy 270μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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