IXGP30N60C2
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 70A 190W TO220
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Switching Energy 190μJ (off)
Td (on/off) @ 25°C 13ns/70ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 70nC
IGBT Type PT
Turn Off Time-Nom (toff) 250 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 24A
Test Condition 400V, 24A, 5 Ω, 15V
Turn On Time 30 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 190W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXG*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 190W
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series HiPerFAST?
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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