IXGP30N60B4D1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 56A 190W TO220
PDF
/
Inventory: 4161
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 190W
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 190W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 56A
Reverse Recovery Time 30 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 53 ns
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 24A
Turn Off Time-Nom (toff) 511 ns
IGBT Type PT
Gate Charge 77nC
Current - Collector Pulsed (Icm) 156A
Td (on/off) @ 25°C 21ns/200ns
Switching Energy 440μJ (on), 700μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
IXGP30N60B4D1+price,IXGP30N60B4D1+datasheet,IXGP30N60B4D1+in stock,buy+IXGP30N60B4D1,finder+IXGP30N60B4D1,IXGP30N60B4D1+tutorials,IXGP30N60B4D1+download