IXGP30N120B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 60A 300W TO220
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Buying Options
Total Price: USD $6.58
Unit Price: USD $6.584236
≥1 USD $6.584236
≥10 USD $6.211547
≥100 USD $5.859939
≥500 USD $5.528251
≥1000 USD $5.215334
Inventory: 1124
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.47mJ (on), 2.16mJ (off)
Td (on/off) @ 25°C 16ns/127ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 87nC
IGBT Type PT
Turn Off Time-Nom (toff) 471 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Test Condition 960V, 30A, 5 Ω, 15V
Turn On Time 56 ns
Collector Emitter Saturation Voltage 3.5V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-220AB
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 3.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*30N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series GenX3?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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